1. Nanoscale. 2011 Jul;3(7):2882-8. doi: 10.1039/c1nr10121h. Epub 2011 May 3. Hierarchical self-assembly of CdTe quantum dots into hyperbranched nanobundles 1. Nano Lett. 2010 Aug 11;10(8):3142-50. doi: 10.1021/nl101930z. Suppression of biexciton auger recombination in CdSe/CdS dot/rods: role of the electronic structure Abstract. We have calculated impact ionization (II) and Auger recombination (AR) lifetimes in hot carrier solar cells (HC-SCs) in operation, and found that these There is a physical process known as the impact ionization effect by which a high-energy electron collides with an atom, giving enough energy to one of the atom’s
Auger Recombination
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LED emitting light under forward bias in an ultra high vacuum chamber allowing simultaneous electron emission energy. Credit: Ecole Polytechnique, Ph. Lavialle (Phys The Auger recombination lifetimes of the excess carriers in p‐type InAs, GaSb, InP, and GaAs are calculated. The calculation is carried out along the line of Beatie Indirect Auger Recombination as the Origin of the Efficiency Droop in Nitride LEDs . Speaker: Manos Kioupakis, Ph.D. Lead Researcher, Causes of Droop Project 1406 IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. QE-18, NO. 10, OCTOBER 1982 Auger Recombination in Quantum-Well InGaAsP Heterostructure Lasers
Auger Recombination
Photocharging ZnO Nanocrystals: Picosecond Hole Capture, Electron Accumulation, and Auger Recombination INTERNATIONAL JOURNAL of RENEWABLE ENERGY RESEARCH Md. Rashedul Huqe et al., Vol.3, No.2, 2013 Analytical Modeling of the Base Dark Saturation
Auger Recombination
Auger recombination-enhanced hot carrier degradation in nMOSFETs with a forward substrate bias We have measured the time‐resolved decay of photoexcited carriers in InGaAsP subsequent to mode‐locked laser pulse excitation at 1.06 μ. Carrier decay rates were
Auger Recombination
Absorption cross sections and Auger recombination lifetimes in inverted core-shell nanocrystals: Implications for lasing performance J. Nanda,a S. A. Ivanov,a H CiteSeerX - Scientific documents that cite the following paper: Experimental study of auger recombination, gain, and temperature sensitivity of 1.5 "m compressively
Auger Recombination
CiteSeerX - Scientific documents that cite the following paper: Band-to-band Auger recombination effect on InGaAsP laser threshold Auger recombination in low-band-gapn-type InGaAs W. K. Metzger,a) M. W. Wanlass, R. J. Ellingson, R. K. Ahrenkiel, and J. J. Carapella National Renewable Energy
Auger Recombination
Auger Recombination
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